Part Number | SI3430DV-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | TDK |
Description | MOSFET N-CH 100V 1.8A 6-TSOP |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 1.14W (Ta) |
Rds On (Max) @ Id, Vgs | 170 mOhm @ 2.4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-TSOP |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Image |
Hot Offer
SI3430DV-T1-GE3
TDK-EPC
12000
5.44
Hong Kong In Fortune Electronics Co., Limited
SI3430DV-T1-GE3
TDK-EPCOS
1205
1.83
Gallop Great Holdings (Hong Kong) Limited
SI3430DV-T1-GE3
TDK Electronics
20000
2.7325
Rs (Int'l) Electronics Limited
SI3430DV-T1-GE3
TDK/EPCOS
180
3.635
SUNTOP SEMICONDUCTOR CO., LIMITED
Si3430DV-T1-GE3
TDK Epcos
389600
4.5375
Shenzhen WTX Capacitor Co., Ltd.