Part Number | IPD135N03LGXT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | TDK |
Description | MOSFET N-CH 30V 30A TO252-3 |
Series | OptiMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 31W (Tc) |
Rds On (Max) @ Id, Vgs | 13.5 mOhm @ 30A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD135N03LGXT
TDK-EPCOS
1822
0.9
MY Group (Asia) Limited
IPD135N03LGXT
TDK Electronics
9042
1.6825
UCAN TRADE (HK) LIMITED
IPD135N03LGXT
TDK/EPCOS
4642
2.465
Fairstock HK Limited
IPD135N03LGXT
TDK Epcos
7519
3.2475
Dedicate Electronics (HK) Limited
IPD135N03LGXT
TDK-EPC
4483
4.03
ONSTAR ELECTRONICS CO., LIMITED