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Description
FQPF9N50C : N-Channel QFET MOSFET 500V, 9A, 800m . For complete documentation, see the data sheet. These N-Channel enhancement mode power Requester Item Number. Mfr Item Number. Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FQPF9N50C . FQPF9N50C . MOSFET, FQPF9N50C , and the UniFET II MOSFET,. FDPF8N50NZ, respectively. Under the same RDS(on), the capacitances of the UniFET II MOSFET were Jan 8, 2016 FQPF9N50C . TO220F-3. FSSZ. FSSZ. 2.11234. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. Peak. Temp. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in
| Part Number | FQPF9N50C |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | TDK |
| Description | MOSFET N-CH 500V 9A TO-220F |
| Series | QFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1030pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 44W (Tc) |
| Rds On (Max) @ Id, Vgs | 800 mOhm @ 4.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F |
| Package / Case | TO-220-3 Full Pack |
| Image |  |
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