Description
TRANS GAN 80V 31A BUMPED DIE Series: eGaN? Amplifier Type: -40°C ~ 150°C (TJ) Applications: Surface Mount Capacitance: Die
Part Number | EPC2029ENGRT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | TDK |
Description | TRANS GAN 80V 31A BUMPED DIE |
Series | eGaN |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 31A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 12mA |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 40V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 30A, 5V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die |
Package / Case | Die |
Image |
EPC2029ENGRT
TDK-EPCOS
18000
1.39
MY Group (Asia) Limited
EPC2029ENGRT
TDK Electronics
1000
2.26
ONSTAR ELECTRONICS CO., LIMITED
EPC2020
TDK/EPCOS
15000
3.13
MY Group (Asia) Limited
EPC2023ENGR
TDK Epcos
3616
4
TERNARY UNION CO., LIMITED
EPC2020
TDK-EPC
3000
4.87
Lungke Electronics Technology Co., Limited